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DriverMax Pro 11.15 Crack License Key + Crack Free Download
New Version DriverMax Pro 11.15 Crack + Keygen Full Version 2020
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DriverMax Pro Crack 2020.
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Instalasi DriverMax Pro 11.15 Keygen + Patch [2020]
DriverMax Pro 11.15 License Key Latest Download 2020
DriverMax Pro 11.15 Crack + Keygen Full Version 20201. Field of the Invention
The present invention relates to semiconductor devices and manufacturing methods thereof. More particularly, the present invention relates to a method for manufacturing a ferroelectric memory device.
2. Description of the Related Art
Ferroelectric memory devices are known as one type of semiconductor devices which retain data in a nonvolatile manner by utilizing a ferroelectric film. Ferroelectric memory devices are characterized by their high operating speed and low power consumption. These advantages have made ferroelectric memory devices attractive for use in various applications, such as portable electronic devices.
Generally, a ferroelectric memory device includes a lower ferroelectric capacitor, an upper ferroelectric capacitor, and an isolation layer between the lower and upper ferroelectric capacitors. The isolation layer reduces leakage currents from the lower ferroelectric capacitor to the upper ferroelectric capacitor. The lower ferroelectric capacitor may include a bottom electrode, a ferroelectric film, and a top electrode sequentially stacked on a substrate. A plurality of openings are formed in the top electrode.
When a ferroelectric memory device is in an off-state, a predetermined voltage is applied to the isolation layer. On the other hand, when the ferroelectric memory device is in an on-state, a negative voltage is applied to the isolation layer. In this case, a portion of the lower ferroelectric capacitor is coupled to the isolation layer. The voltage applied to the isolation layer makes the ferroelectric capacitor have a polarization of the same polarity as that of the lower ferroelectric capacitor. In other words, when the ferroelectric memory device is in an on-state, data is maintained as a logical level “0”.
In the on-state, if a part of the ferroelectric capacitor is not coupled to the isolation layer, a leakage current flows through the isolated area. As the ferroelectric capacitor becomes thinner, the leakage current is more likely to occur.Q:
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